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Physical and Electrical Properties of Single Zn2SnO4 Nanowires
School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore.
School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore.ORCID-id: 0000-0002-3764-4235
School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore.
School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore.
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2011 (engelsk)Inngår i: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 14, nr 1, s. K5-K7Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Electrical characterizations of single Zn2SnO4 (ZTO) nanowire devices are presented. These include resistivity, mobility, and photosensing measurements. The resistivity and the mobility of the Zn2SnO4 nanowire were measured to be 5.6 cm and 0.2 cm2/Vs, respectively. These values were found to be strongly dependent on the amount of electron-donating defects and less dependent on the thickness of the nanowires. An increase in the resistivity when changing the ambient atmosphere is observed. This change is caused by defect states lying in the bandgap, as shown by photoluminescence. The results imply the potential of ZTO nanowires as phototransistors and other photosensitive devices. © 2010 The Electrochemical Society.

sted, utgiver, år, opplag, sider
Pennington, NJ: Electrochemical Society, 2011. Vol. 14, nr 1, s. K5-K7
Emneord [en]
carrier mobility, defect states, electrical resistivity, energy gap, nanowires, photoluminescence, semiconductor materials, semiconductor quantum wires, zinc compounds
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Identifikatorer
URN: urn:nbn:se:hh:diva-26522DOI: 10.1149/1.3505875ISI: 000284317600032Scopus ID: 2-s2.0-78751549000OAI: oai:DiVA.org:hh-26522DiVA, id: diva2:747663
Tilgjengelig fra: 2014-09-17 Laget: 2014-09-17 Sist oppdatert: 2017-12-05bibliografisk kontrollert

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