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Tuning of the detection wavelength in quantum dots-in-a-well infrared photodetectors
Acreo AB, Kista, Sweden & Linköping University, Linköping, Sweden.
Linköping University, Linköping, Sweden.
IRnova, Kista, Sweden.
Acreo AB, Kista, Sweden.
Vise andre og tillknytning
2008 (engelsk)Inngår i: Proceedings of SPIE, 6940, Infrared Technology and Applications XXXIV, 694002, 2008, Vol. 6940, nr 1-2, artikkel-id 694002Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

In this study, bias mediated tuning of the detection wavelength within the infrared wavelength region is demonstrated for quantum dots-in-a-well (DWELL) infrared photodetectors. In DWELL structures, intersubband transitions in the conduction band occur from a discrete state in the quantum dot to a subband inthe quantum well. Compared to "conventional" quantum dot infrared photodetectors, where the transitions take place between different discrete bands in thequantum dots, new possibilities to tune the detection wavelength window are opened up, partly by varying the quantum dot energy levels and partly by adjusting the width and composition of the quantum well. In the DWELL structure used, an asymmetric positioning of the InAs quantum dot layer in a 8 nm wide In0.15Ga0.85As/GaAs QW has been applied which enables tuning of the peak detection wavelength within the long wavelength infrared (LWIR; 8 - 14 gm) region. When the applied bias was reversed, a wavelength shift from 8.5 to 9.5 mu m was observed for the peak position in the spectral response. For another DWELL structure, with a well width of 2 nm, the tuning range of the detector could be shifted from the medium wavelength infrared (MWIR; 3-5 mu m) region to the LWIR region. With small changes in the applied bias, the peak detection wavelength could be shifted from 5.1 to 8 mu m. These tuning properties ofDWELL structures could be essential for applications such as modulators and two-colour infrared detection. © (2008) COPYRIGHT SPIE--The International Society for Optical Engineering.

sted, utgiver, år, opplag, sider
2008. Vol. 6940, nr 1-2, artikkel-id 694002
Serie
Proceedings of SPIE, ISSN 0277-786X ; 1-2
Emneord [en]
QDIP, DWELL, quantum dot, InAs, GaAs, photocurrent, responsivity, MOVPE
HSV kategori
Identifikatorer
URN: urn:nbn:se:hh:diva-22390DOI: 10.1117/12.781227ISI: 000257109000001Scopus ID: 2-s2.0-45549110325ISBN: 978-0-8194-7131-4 (tryckt)OAI: oai:DiVA.org:hh-22390DiVA, id: diva2:624795
Konferanse
34th Conference on Infrared Technology and Applications, 17-20 Mars 2008, Orlando, Florida, US
Merknad

Article Number: 694002

Tilgjengelig fra: 2013-06-03 Laget: 2013-06-03 Sist oppdatert: 2018-04-03bibliografisk kontrollert

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