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Ferromagnetic single-electron transistors fabricated by atomic force microscopy
Högskolan i Halmstad, Akademin för informationsteknologi, Halmstad Embedded and Intelligent Systems Research (EIS), Tillämpad matematik och fysik (MPE-lab).
Högskolan i Halmstad, Akademin för informationsteknologi, Halmstad Embedded and Intelligent Systems Research (EIS), Tillämpad matematik och fysik (MPE-lab). (Nanovetenskap)ORCID-id: 0000-0001-5027-1456
Högskolan i Kalmar, Kalmar, Sweden.
Linné Universitetet, Kalmar, Sweden.
Vise andre og tillknytning
2006 (engelsk)Konferansepaper, Oral presentation with published abstract (Fagfellevurdert)
Abstract [en]

We report on the fabrication and magneto-transport measurements of Ni/Au/Ni ferromagnetic single-electron transistors (F-SETs), fabricated by atomic force microscopy. By positioning a single Au disc (30 nm in diameter) into the gap between the Ni drain and source electrodes (of width 220 nm and 80 nm, respectively) step-by-step with Angstrom precision, and using plasma-processed NiOx as tunneling barriers, we can successfully fabricate F-SETs of high quality and substantial stability. The characteristic time interval of the device between two successive tunneling events is 10ps. The absence of any clear features in the transport related to the applied external magnetic field indicates that no spin-accumulation is maintained in the central Au disc. This interesting result indicates that the spin-relaxation time inside the central island should be shorter than 10ps. Based on these findings, we will discuss possible mechanisms of spin-relaxation in metal nano-structures triggered by spin-orbit interaction.

sted, utgiver, år, opplag, sider
2006.
HSV kategori
Identifikatorer
URN: urn:nbn:se:hh:diva-22362OAI: oai:DiVA.org:hh-22362DiVA, id: diva2:623848
Konferanse
APS, March Meeting, 2006, Baltimore, USA
Tilgjengelig fra: 2013-05-28 Laget: 2013-05-28 Sist oppdatert: 2018-04-03bibliografisk kontrollert

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