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Bias and temperature dependence of the escape processes in quantum dots-in-a-well infrared photodetectors
Acreo AB.
Linköping University.
Högskolan i Halmstad, Sektionen för Informationsvetenskap, Data– och Elektroteknik (IDE), Halmstad Embedded and Intelligent Systems Research (EIS), Tillämpad matematik och fysik (CAMP).ORCID-id: 0000-0001-5027-1456
IRnova.
Vise andre og tillknytning
2008 (engelsk)Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 93, nr 10, s. 103501-Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The performance of quantum dots-in-a-well infrared photodetectors (DWELL IPs) has been studied by means of interband and intersubband photocurrent measurements as well as dark current measurements. Using interband photocurrent measurements, substantial escape of electrons from lower lying states in the DWELL structure at large biases was revealed. Furthermore, a significant variation in the escape probability from energy states in the DWELL structure with applied bias was observed. These facts can explain the strong temperature and bias dependence of both photocurrent and dark currents in DWELL IPs.

sted, utgiver, år, opplag, sider
New York: American Institute of Physics (AIP), 2008. Vol. 93, nr 10, s. 103501-
Emneord [en]
Dark currents, Electric current measurement, Infrared detectors, Optical waveguides, Optoelectronic devices, Photocurrents, Photodetectors, Quantum electronics
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Identifikatorer
URN: urn:nbn:se:hh:diva-3409DOI: 10.1063/1.2977757ISI: 000259797000101Scopus ID: 2-s2.0-51749103520OAI: oai:DiVA.org:hh-3409DiVA, id: diva2:295222
Tilgjengelig fra: 2010-02-17 Laget: 2009-12-01 Sist oppdatert: 2018-04-03bibliografisk kontrollert

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