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Title [sv]
Nanotrådsbaserade detektormatriser för IR avbildning
Title [en]
Nanowire-based focal plane arrays for IR imaging
Abstract [en]
This research proposal deals with a novel approach to monolithically integrate III-V focal plane arrays (FPAs) with silicon for infrared sensors and thermal imaging applications. The key technology proposed relies on direct growth of optically active III-V nanowire (NW) structures on silicon. NWs are needle-like semiconductor nanostructures with a typical diameter of 5-100 nm and a length of 1-10um. NWs can be fabricated directly on silicon in a bottom-up process due to their small footprint which elastically relaxes mismatches in crystal parameters of the NW and silicon. Specifically, we propose to design, model, fabricate and characterize 2 different detector geometries: axial and radial. The axial detectors comprise multi-quantum dots (segments) of InAsP along InP NWs, whereas the radial detectors are made from InAsP quantum wells (QWs) grown radially on InP NWs. Summarized, the main objectives of this proposal are: (i) to develop the growth of complex axial multi-dot and radial multi-quantum well NW heterostructures, (ii) to acquire a deepened fundamental understanding of the light-matter interaction in nanowire-based heterostructures, (iii) to realize cheap optical sensor arrays that combine high detectivity and low dark current at elevated temperatures with excellent material homogeneity suitable for fabrication of large chips and (iiii) to develop fabrication techniques that are compatible with main-stream silicon technology.
Principal InvestigatorPettersson, Håkan
Coordinating organisation
Halmstad University
2012-01-01 - 2014-12-31
National Category
Condensed Matter Physics
DiVA, id: project:201Project, id: 2011-04639_VR

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