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Kumar, Sandeep
Publications (2 of 2) Show all publications
Johannes, A., Noack, S., Paschoal Jr., W., Kumar, S., Jacobsson, D., Pettersson, H., . . . Ronning, C. (2015). Corrigendum: Enhanced sputtering and incorporation of Mn in implanted GaAs and ZnO nanowires (2014 J. Phys. D: Appl. Phys. 47 394003). Journal of Physics D: Applied Physics, 48(7), Article ID 079501.
Open this publication in new window or tab >>Corrigendum: Enhanced sputtering and incorporation of Mn in implanted GaAs and ZnO nanowires (2014 J. Phys. D: Appl. Phys. 47 394003)
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2015 (English)In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 48, no 7, article id 079501Article in journal (Refereed) Published
Place, publisher, year, edition, pages
Bristol: Institute of Physics Publishing (IOPP), 2015
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:hh:diva-35703 (URN)10.1088/0022-3727/48/7/079501 (DOI)000348842800009 ()2-s2.0-84961292028 (Scopus ID)
Available from: 2018-02-06 Created: 2018-02-06 Last updated: 2018-04-03Bibliographically approved
Paschoal Jr., W., Kumar, S., Jacobsson, D., Johannes, A., Jain, V., Canali, C. M., . . . Pettersson, H. (2014). Magnetoresistance in Mn ion-implanted GaAs:Zn nanowires. Applied Physics Letters, 104(15), Article ID 153112.
Open this publication in new window or tab >>Magnetoresistance in Mn ion-implanted GaAs:Zn nanowires
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2014 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 104, no 15, article id 153112Article in journal (Refereed) Published
Abstract [en]

We have investigated the magnetoresistance (MR) in a series of Zn doped (p-type) GaAs nanowires implanted with different Mn concentrations. The nanowires with the lowest Mn concentration (~0.0001%) exhibit a low resistance of a few kΩ at 300K and a 4% positive MR at 1.6K, which can be well described by invoking a spin-split subband model. In contrast, nanowires with the highest Mn concentration (4%) display a large resistance of several MΩ at 300K and a large negative MR of 85% at 1.6K. The large negative MR is interpreted in terms of spin-dependent hopping in a complex magnetic nanowire landscape of magnetic polarons, separated by intermediate regions of Mn impurity spins. Sweeping the magnetic field back and forth for the 4% sample reveals a hysteresis that indicates the presence of a weak ferromagnetic phase. We propose co-doping with Zn to be a promising way to reach the goal of realizing ferromagnetic Ga1-xMnxAs nanowires for future nanospintronics. © 2014 AIP Publishing LLC.

Place, publisher, year, edition, pages
New York: American Institute of Physics (AIP), 2014
Keywords
Nanospintronics, Ion-implantation, GaMnAs, Nanowires, hopping transport, Negative magnetoresistance
National Category
Natural Sciences
Identifiers
urn:nbn:se:hh:diva-25126 (URN)10.1063/1.4870423 (DOI)000335145200060 ()2-s2.0-84899622402 (Scopus ID)
Funder
Swedish Research CouncilKnut and Alice Wallenberg FoundationSwedish Foundation for Strategic Research
Note

W. Paschoal, Jr. and S. Kumar contributed equally to this work and are co-first authors. The authors acknowledge financial support from nmC@LU, the Swedish Research Council (VR), the Knut and Alice Wallenberg Foundation, the Swedish National Board for Industrial, Technological Development, the Swedish Foundation for Strategic Research, the Nordforsk research network “Nanospintronics; theory and simulations,” and the German Research Society (DFG) Project Ro1198/14. One of the authors, W.P., Jr., gratefully acknowledges financial support from the Pará Education Secretary (SEDUC) and the Pará Government School (EGPA).

Available from: 2014-04-22 Created: 2014-04-22 Last updated: 2018-04-03Bibliographically approved
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