hh.sePublications
Change search
Link to record
Permanent link

Direct link
Publications (10 of 115) Show all publications
Kumari, R., Gellanki, J., Kundale, S. S., Ustad, R. E., Dongale, T. D., Fu, Y., . . . Kumar, S. (2023). Artificial synaptic characteristics of PVA:ZnO nanocomposite memristive devices. APL Materials, 11(10), Article ID 101124.
Open this publication in new window or tab >>Artificial synaptic characteristics of PVA:ZnO nanocomposite memristive devices
Show others...
2023 (English)In: APL Materials, E-ISSN 2166-532X, Vol. 11, no 10, article id 101124Article in journal (Refereed) Published
Abstract [en]

Computational efficiency is significantly enhanced using artificial neural network-based computing. A two-terminal memristive device is a powerful electronic device that can mimic the behavior of a biological synapse in addition to storing information and performing logic operations. This work focuses on the fabrication of a memristive device that utilizes a resistive switching layer composed of polyvinyl alcohol infused with ZnO nanoparticles. By incorporating ZnO nanoparticles into the polymer film, the fabricated memristive devices exhibit functionalities that closely resemble those of biological synapses, including short-term and long-term plasticity, paired-pulse facilitation, and spike time-dependent plasticity. These findings establish the ZnO nanoparticle-polymer nanocomposite as a highly promising material for future neuromorphic systems. © 2023 Author(s).

Place, publisher, year, edition, pages
Melville: American Institute of Physics (AIP), 2023
Keywords
Activation energy, Computation theory, Computational efficiency, II-VI semiconductors, Memristors, Metal nanoparticles, Neural networks, Polymer films, Semiconducting films
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:hh:diva-51997 (URN)10.1063/5.0165205 (DOI)2-s2.0-85175313733 (Scopus ID)
Available from: 2023-11-14 Created: 2023-11-14 Last updated: 2023-11-16Bibliographically approved
Menon, H., Jeddi, H., Morgan, N. P., Fontcuberta i Morral, A., Pettersson, H. & Borg, M. (2023). Monolithic InSb nanostructure photodetectors on Si using rapid melt growth. Nanoscale Advances, 5(4), 1152-1162
Open this publication in new window or tab >>Monolithic InSb nanostructure photodetectors on Si using rapid melt growth
Show others...
2023 (English)In: Nanoscale Advances, E-ISSN 2516-0230, Vol. 5, no 4, p. 1152-1162Article in journal (Refereed) Published
Abstract [en]

Monolithic integration of InSb on Si could be a key enabler for future electronic and optoelectronic applications. In this work, we report the fabrication of InSb metal-semiconductor-metal photodetectors directly on Si using a CMOS-compatible process known as rapid melt growth. Fourier transform spectroscopy demonstrates a spectrally resolved photocurrent peak from a single crystalline InSb nanostructure with dimensions of 500 nm × 1.1 μm × 120 nm. Time-dependent optical characterization of a device under 1550 nm illumination indicated a stable photoresponse with responsivity of 0.50 A W−1 at 16 nW illumination, with a time constant in the range of milliseconds. Electron backscatter diffraction spectroscopy revealed that the single crystalline InSb nanostructures contain occasional twin defects and crystal lattice twist around the growth axis, in addition to residual strain, possibly causing the observation of a low-energy tail in the detector response extending the photosensitivity out to 10 μm wavelengths (0.12 eV) at 77 K. © 2023 RSC.

Place, publisher, year, edition, pages
Cambridge: Royal Society of Chemistry, 2023
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:hh:diva-50155 (URN)10.1039/d2na00903j (DOI)000920713800001 ()2-s2.0-85147267048 (Scopus ID)
Funder
Swedish Foundation for Strategic Research, ICA16-0008The Crafoord Foundation, 20171001Royal Physiographic Society in Lund
Note

Funding: This work is supported by Swedish Foundation for Strategic Research (nr ICA16-0008), Crafoord Foundation (nr 20171001), Royal Physiographic Society of Lund, and NanoLund. AFM and NM would also like to thank funding from SNSF though the NCCR QSIT and project No. CRSK-2_190289.

Available from: 2023-03-22 Created: 2023-03-22 Last updated: 2023-05-10Bibliographically approved
Chalangar, E., Mustafa, E., Nur, O., Willander, M. & Pettersson, H. (2023). Nanopatterned rGO/ZnO: Al seed layer for vertical growth of single ZnO nanorods. Nanotechnology, 34(25), 1-7, Article ID 255301.
Open this publication in new window or tab >>Nanopatterned rGO/ZnO: Al seed layer for vertical growth of single ZnO nanorods
Show others...
2023 (English)In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 34, no 25, p. 1-7, article id 255301Article in journal (Refereed) Published
Abstract [en]

In this work, we demonstrate a novel low-cost template-assisted route to synthesize vertical ZnO nanorod arrays on Si (100). The nanorods were grown on a patterned double seed layer comprised of reduced graphene oxide (rGO) and Al-doped ZnO nanoparticles. The seed layer was fabricated by spray-coating the substrate with graphene and then dip-coating it into a Al-doped ZnO sol-gel solution. The growth template was fabricated from a double-layer resist, spin-coated on top of the rGO/ZnO:Al seed layer, and patterned by colloidal lithography. The results show a successful chemical bath deposition of vertically aligned ZnO nanorods with controllable diameter and density in the nanoholes in the patterned resist mask. Our novel method can presumably be used to fabricate electronic devices on virtually any smooth substrate with a thermal budget of 1 min at 300 °C with the seed layer acting as a conductive strain-relieving back contact. The top contact can simply be made by depositing a suitable transparent conductive oxide or metal, depending on the specific application. © 2023 The Author(s). Published by IOP Publishing Ltd.

Place, publisher, year, edition, pages
Bristol: Institute of Physics Publishing (IOPP), 2023
Keywords
colloidal lithography, nanofabrication, nanorod arrays, reduced graphene oxide, sol–gel, vertical growth, zinc oxide
National Category
Physical Sciences
Identifiers
urn:nbn:se:hh:diva-50413 (URN)10.1088/1361-6528/acc662 (DOI)000970495400001 ()36947870 (PubMedID)2-s2.0-85152244759 (Scopus ID)
Available from: 2023-05-05 Created: 2023-05-05 Last updated: 2024-01-15Bibliographically approved
Jeddi Abdarloo, H., Witzigmann, B., Adham, K., Hrachowina, L., Borgström, M. T. & Pettersson, H. (2023). Spectrally Tunable Broadband Gate-All-Around InAsP/InP Quantum Discs-in-Nanowire Array Phototransistors with a High Gain-Bandwidth Product. ACS Photonics, 10(6), 1748-1755
Open this publication in new window or tab >>Spectrally Tunable Broadband Gate-All-Around InAsP/InP Quantum Discs-in-Nanowire Array Phototransistors with a High Gain-Bandwidth Product
Show others...
2023 (English)In: ACS Photonics, E-ISSN 2330-4022, Vol. 10, no 6, p. 1748-1755Article in journal (Refereed) Published
Abstract [en]

High-performance broadband photodetectors offering spectral tunability and a high gain-bandwidth product are crucial in many applications. Here, we report on a detailed experimental and theoretical study of three-terminal phototransistors comprised of three million InP nanowires with 20 embedded InAsP quantum discs in each nanowire. A global, transparent ITO gate all around the nanowires facilitates a radial control of the carrier concentration by more than two orders of magnitude. The transfer characteristics reveal two different transport regimes. In the subthreshold region, the photodetector operates in a diffusion mode with a distinct onset at the bandgap of InP. At larger gate biases, the phototransistor switches to a drift mode with a strong contribution from the InAsP quantum discs. Besides an unexpected spectral tunability, the detector exhibits a state-of-the-art responsivity, reaching around 100 A/W (638 nm/20 μW) @ VGS = 1.0 V/VDS = 0.5 V with a gain-bandwidth product of around 1 MHz, in excellent agreement with a comprehensive real-device model. © 2023 The Authors. Published by American Chemical Society.

Place, publisher, year, edition, pages
Washington, DC: American Chemical Society (ACS), 2023
Keywords
gate-all-around contacts, infrared photodetectors, interface traps, nanowire array phototransistors, nanowires, photogating, quantum discs-in-nanowires
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:hh:diva-51396 (URN)10.1021/acsphotonics.2c02024 (DOI)001009704200001 ()2-s2.0-85162919445 (Scopus ID)
Funder
Swedish Research Council, 2018-04722
Note

Funding: The Swedish Research Council (project ID: 2018-04722), NanoLund and Myfab. Further support from the federal state of Hesse, Germany, within the SMolBits project in the LOEWE program is also acknowledged.

Available from: 2023-08-15 Created: 2023-08-15 Last updated: 2023-08-15Bibliographically approved
Chalangar, E., Björk, E. M. & Pettersson, H. (2022). Electrochemical investigation of carbon paper/ZnO nanocomposite electrodes for capacitive anion capturing. Scientific Reports, 12(1), Article ID 11843.
Open this publication in new window or tab >>Electrochemical investigation of carbon paper/ZnO nanocomposite electrodes for capacitive anion capturing
2022 (English)In: Scientific Reports, E-ISSN 2045-2322, Vol. 12, no 1, article id 11843Article in journal (Refereed) Published
Abstract [en]

In this work, we demonstrate an effective anion capturing in an aqueous medium using a highly porous carbon paper decorated with ZnO nanorods. A sol–gel technique was first employed to form a thin and compact seed layer of ZnO nanoparticles on the dense network of carbon fibers in the carbon paper. Subsequently, ZnO nanorods were successfully grown on the pre-seeded carbon papers using inexpensive chemical bath deposition. The prepared porous electrodes were electrochemically investigated for improved charge storage and stability under long-term operational conditions. The results show effective capacitive deionization with a maximum areal capacitance of 2 mF/cm2, an energy consumption of 50 kJ per mole of chlorine ions, and an excellent long-term stability of the fabricated C-ZnO electrodes. The experimental results are supported by COMSOL simulations. Besides the demonstrated capacitive desalination application, our results can directly be used to realize suitable electrodes for energy storage in supercapacitors. © 2022, The Author(s).

Place, publisher, year, edition, pages
London: Nature Publishing Group, 2022
National Category
Materials Chemistry
Identifiers
urn:nbn:se:hh:diva-48583 (URN)10.1038/s41598-022-15771-w (DOI)000824910400006 ()35821513 (PubMedID)2-s2.0-85133908753 (Scopus ID)
Available from: 2022-11-08 Created: 2022-11-08 Last updated: 2024-01-15Bibliographically approved
Jeddi Abdarloo, H., Karimi, M., Witzigmann, B., Zeng, X., Hrachowina, L., Borgström, M. T. & Pettersson, H. (2021). Gain and bandwidth of InP nanowire array photodetectors with embedded photogated InAsP quantum discs. Nanoscale, 13(12), 6227-6233
Open this publication in new window or tab >>Gain and bandwidth of InP nanowire array photodetectors with embedded photogated InAsP quantum discs
Show others...
2021 (English)In: Nanoscale, ISSN 2040-3364, E-ISSN 2040-3372, Vol. 13, no 12, p. 6227-6233Article in journal (Refereed) Published
Abstract [en]

Here we report on the experimental results and advanced self-consistent real device simulations revealing a fundamental insight into the non-linear optical response of n+-i-n+ InP nanowire array photoconductors to selective 980 nm excitation of 20 axially embedded InAsP quantum discs in each nanowire. The optical characteristics are interpreted in terms of a photogating mechanism that results from an electrostatic feedback from trapped charge on the electronic band structure of the nanowires, similar to the gate action in a field-effect transistor. From detailed analyses of the complex charge carrier dynamics in dark and under illumination was concluded that electrons are trapped in two acceptor states, located at 140 and 190 meV below the conduction band edge, at the interface between the nanowires and a radial insulating SiOx cap layer. The non-linear optical response was investigated at length by photocurrent measurements recorded over a wide power range. From these measurements were extracted responsivities of 250 A W-1 (gain 320)@20 nW and 0.20 A W-1 (gain 0.2)@20 mW with a detector bias of 3.5 V, in excellent agreement with the proposed two-trap model. Finally, a small signal optical AC analysis was made both experimentally and theoretically to investigate the influence of the interface traps on the detector bandwidth. While the traps limit the cut-off frequency to around 10 kHz, the maximum operating frequency of the detectors stretches into the MHz region. © The Royal Society of Chemistry

Place, publisher, year, edition, pages
Cambridge: Royal Society of Chemistry, 2021
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:hh:diva-45953 (URN)10.1039/d1nr00846c (DOI)000631583200001 ()33885608 (PubMedID)2-s2.0-85103624812 (Scopus ID)
Funder
EU, Horizon 2020, 641023Swedish Foundation for Strategic Research The Crafoord FoundationLund UniversityKnut and Alice Wallenberg Foundation, 2016.0089Swedish Research Council, 2018-04722Swedish Energy Agency, P38331-1
Note

The authors gratefully acknowledge financial support from NanoLund, the Swedish Research Council (project 2018-04722), the Swedish National Board for Industrial and Technological Development, the Knut and Alice Wallenberg Foundation (project 2016.0089), the Swedish Foundation for Strategic Research and the Swedish Energy Agency (project P38331-1), the Erik Johan Ljungberg Foundation, and the Crafoord Foundation. This project has also received funding from the European Union’s Horizon 2020 research and innovation program under Grant Agreement 641023 (NanoTandem). Finally, the authors acknowledge support from the National Center for High Resolution Electron Microscopy (nCHREM) at Lund University.

Available from: 2021-11-29 Created: 2021-11-29 Last updated: 2021-11-29Bibliographically approved
Devi, C., Gellanki, J., Pettersson, H. & Kumar, S. (2021). High sodium ionic conductivity in PEO/PVP solid polymer electrolytes with InAs nanowire fillers. Scientific Reports, 11(1), Article ID 20180.
Open this publication in new window or tab >>High sodium ionic conductivity in PEO/PVP solid polymer electrolytes with InAs nanowire fillers
2021 (English)In: Scientific Reports, E-ISSN 2045-2322, Vol. 11, no 1, article id 20180Article in journal (Refereed) Published
Abstract [en]

Solid-state sodium ion batteries are frequently referred to as the most promising technology for next-generation energy storage applications. However, developing a suitable solid electrolyte with high ionic conductivity, excellent electrolyte–electrode interfaces, and a wide electrochemical stability window, remains a major challenge. Although solid-polymer electrolytes have attracted great interest due to their low cost, low density and very good processability, they generally have significantly lower ionic conductivity and poor mechanical strength. Here, we report on the development of a low-cost composite solid polymer electrolyte comprised of poly(ethylene oxide), poly(vinylpyrrolidone) and sodium hexafluorophosphate, mixed with indium arsenide nanowires. We show that the addition of 1.0% by weight of indium arsenide nanowires increases the sodium ion conductivity in the polymer to 1.50 × 10−4 Scm−1 at 40 °C. In order to explain this remarkable characteristic, we propose a new transport model in which sodium ions hop between close-spaced defect sites present on the surface of the nanowires, forming an effective complex conductive percolation network. Our work represents a significant advance in the development of novel solid polymer electrolytes with embedded engineered ultrafast 1D percolation networks for near-future generations of low-cost, high-performance batteries with excellent energy storage capabilities. © 2021, The Author(s).

Place, publisher, year, edition, pages
London: Nature Publishing Group, 2021
National Category
Polymer Chemistry
Identifiers
urn:nbn:se:hh:diva-45866 (URN)10.1038/s41598-021-99663-5 (DOI)000706830500032 ()34642387 (PubMedID)2-s2.0-85116916738 (Scopus ID)
Note

CD and SK acknowledge financial support by the Department of Science and Technology (DST), India, under Grant No: YSS/2015/001403 and University Grant Commission for Project No. (F4-5(112-FRP)/2014(BSR)).

Available from: 2021-11-16 Created: 2021-11-16 Last updated: 2022-09-15Bibliographically approved
Chalangar, E., Nur, O., Willander, M., Gustafsson, A. & Pettersson, H. (2021). Synthesis of Vertically Aligned ZnO Nanorods Using Sol-gel Seeding and Colloidal Lithography Patterning. Nanoscale Research Letters, 16(1), Article ID 46.
Open this publication in new window or tab >>Synthesis of Vertically Aligned ZnO Nanorods Using Sol-gel Seeding and Colloidal Lithography Patterning
Show others...
2021 (English)In: Nanoscale Research Letters, ISSN 1931-7573, E-ISSN 1556-276X, Vol. 16, no 1, article id 46Article in journal (Refereed) Published
Abstract [en]

Different ZnO nanostructures can be grown using low-cost chemical bath deposition. Although this technique is cost-efficient and flexible, the final structures are usually randomly oriented and hardly controllable in terms of homogeneity and surface density. In this work, we use colloidal lithography to pattern (100) silicon substrates to fully control the nanorods' morphology and density. Moreover, a sol-gel prepared ZnO seed layer was employed to compensate for the lattice mismatch between the silicon substrate and ZnO nanorods. The results show a successful growth of vertically aligned ZnO nanorods with controllable diameter and density in the designated openings in the patterned resist mask deposited on the seed layer. Our method can be used to fabricate optimized devices where vertically ordered ZnO nanorods of high crystalline quality are crucial for the device performance. © 2021 BioMed Central Ltd

Place, publisher, year, edition, pages
Heidelberg: Springer, 2021
National Category
Nano Technology Materials Chemistry Condensed Matter Physics
Identifiers
urn:nbn:se:hh:diva-44028 (URN)10.1186/s11671-021-03500-7 (DOI)000627791200001 ()33709294 (PubMedID)2-s2.0-85102445623 (Scopus ID)
Funder
ÅForsk (Ångpanneföreningen's Foundation for Research and Development), 19-725The Crafoord Foundation
Note

Open access funding provided by Lund University. This research was funded by the ÅForsk Foundation (project number 19-725), with additional financial support from Halmstad University, Linköping University and Lund University. The detector used for the cathodoluminescence was financed by the Crafoord Foundation.

Available from: 2021-03-12 Created: 2021-03-12 Last updated: 2024-01-15Bibliographically approved
Devi, C., Singhal, R., Silva, K. D., Paschoal, W., Pettersson, H. & Kumar, S. (2020). Electrical transport properties of InAs nanowires synthesized by a solvothermal method. Nanotechnology, 31(23), Article ID 235709.
Open this publication in new window or tab >>Electrical transport properties of InAs nanowires synthesized by a solvothermal method
Show others...
2020 (English)In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 31, no 23, article id 235709Article in journal (Refereed) Published
Abstract [en]

Nanowires are widely considered to be key elements in future disruptive electronics and photonics. This paper presents the first detailed study of transport mechanisms in single-crystalline InAs nanowires synthesized by a cheap solvothermal wet chemical method. From detailed analyses of temperature-dependent current-voltage characteristics, it was observed that contacted nanowires operate in a linear transport regime at biases below a critical cross-over voltage. For larger biases, the transport changes to space-charge-limited conduction assisted by traps. The characteristic parameters such as free electron concentration, trap concentration and energy distribution, and electron mobility were all calculated. It was demonstrated that the nanowires have key electrical properties comparable to those of InAs nanowires grown by molecular beam epitaxy. Our results might pave the way for cheap disruptive low-dimensional electronics such as resistive switching devices. © 2020 IOP Publishing Ltd.

Place, publisher, year, edition, pages
Bristol: Institute of Physics Publishing (IOPP), 2020
Keywords
InAs nanowires, solvothermal growth, space-charge-limited current
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:hh:diva-43222 (URN)10.1088/1361-6528/ab78ad (DOI)000521955500001 ()32084656 (PubMedID)2-s2.0-85082147239 (Scopus ID)
Note

Funding Agency:

Ministry of Electronics and Information Technology, Govt. of India at the Indian Institute of Science, Bengaluru  

Department of Science & Technology (India) Grant Number: YSS/2015/001403

University Grants Commission, India Grant Number: F4-5(112-FRP)/2014(BSR)

Inter-University Accelerator CentreGrant Number:  IUAC/XIII.7/UFR-58322

National Council for Scientific and Technological Development (CNPq)

 CAPES

 Ciencia Tecnologia e Inovacao (FINEP)

Available from: 2020-10-13 Created: 2020-10-13 Last updated: 2021-05-11Bibliographically approved
Jam, R. J., Beech, J. P., Zeng, X., Johansson, J., Samuelson, L., Pettersson, H. & Borgström, M. T. (2020). Embedded sacrificial AlAs segments in GaAs nanowires for substrate reuse. Nanotechnology, 31(20), Article ID 204002.
Open this publication in new window or tab >>Embedded sacrificial AlAs segments in GaAs nanowires for substrate reuse
Show others...
2020 (English)In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 31, no 20, article id 204002Article in journal (Refereed) Published
Abstract [en]

We report on the use of a sacrificial AlAs segment to enable substrate reuse for nanowire synthesis. A silicon nitride template was deposited on a p-type GaAs substrate. Then a pattern was transferred to the substrate by nanoimprint lithography and reactive ion etching. Thermal evaporation was used to define Au seed particles. Metalorganic vapour phase epitaxy was used to grow AlAs-GaAs NWs in the vapour-liquid-solid growth mode. The yield of synthesised nanowires, compared to the number expected from the patterned template, was more than 80%. After growth, the nanowires were embedded in a polymer and mechanically removed from the parent substrate. The parent substrate was then immersed in an HCl:H2O (1:1) mixture to dissolve the remaining stub of the sacrificial AlAs segment. The pattern fidelity was preserved after peeling off the nanowires and cleaning, and the semiconductor surface was flat and ready for reuse. Au seed particles were then deposited on the substrate by use of pulse electrodeposition, which was selective to the openings in the growth template, and then nanowires were regrown. The yield of regrowth was less optimal compared to the first growth but the pattern was preserved. Our results show a promising approach to reduce the final cost of III-V nanowire based solar cells. © 2020 The Author(s). Published by IOP Publishing Ltd.

Place, publisher, year, edition, pages
Bristol: Institute of Physics Publishing (IOPP), 2020
Keywords
electrodeposition, nanowire, sacrificial segment, substrate reuse
National Category
Nano Technology
Identifiers
urn:nbn:se:hh:diva-43226 (URN)10.1088/1361-6528/ab7680 (DOI)000537542700002 ()32106108 (PubMedID)2-s2.0-85082168250 (Scopus ID)
Funder
The Crafoord FoundationSwedish Energy AgencyKnut and Alice Wallenberg FoundationSwedish Research Council
Note

Funding Agency: NanoLund, Myfab, Halmstad University 

Available from: 2020-10-09 Created: 2020-10-09 Last updated: 2021-05-11Bibliographically approved
Projects
Nanowire-based focal plane arrays for IR imaging [2011-04639_VR]; Halmstad UniversityBias-tunable quantum disc-in-nanowire photonic crystal IR detectors [2018-04722_VR]; Halmstad UniversityMegapixel - superlattice detectors with optical metasurfaces [ID21-0093]
Organisations
Identifiers
ORCID iD: ORCID iD iconorcid.org/0000-0001-5027-1456

Search in DiVA

Show all publications