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Flodgren, V., Das, A., Sestoft, J. E., Alcer, D., Jensen, T. K., Jeddi, H., . . . Mikkelsen, A. (2025). Direct on-Chip Optical Communication between Nano Optoelectronic Devices. ACS Photonics
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2025 (English)In: ACS Photonics, E-ISSN 2330-4022Article in journal (Refereed) Epub ahead of print
Abstract [en]

On-chip optical communication between individual nano optoelectronic components is important to reduce the footprint and improve energy efficiency of photonic neuromorphic solutions. Although nanoscale photon emitters and receivers have been reported separately, communication between them remains largely unexplored. We demonstrate direct on-chip directional broadcasting of light between individual InP nanowire photodiodes on silicon. The performance of multiple wire-to-wire communication circuits is mapped, demonstrating robust performance with up to 5 bit resolution as needed in biological networks and a minimum component driving power for continuous operation of 0.5 μW which is below that of conventional hardware. The results agree well with theoretical modeling that allows us to understand network performance limits and identify where significant improvements could be achieved. We estimate that an energy per operation of ∼1 fJ and signal fan-out from one emitter to hundreds of other nodes is possible. We find that the nanowire circuit performance parameters can satisfy the quantitative requirements to run the tasks of neural nodes in a bioderived neural network for autonomous navigation. © 2025 The Authors.

Place, publisher, year, edition, pages
Washington: American Chemical Society (ACS), 2025
Keywords
communication, FDTD, III−V, nanophotonics, nanowire, neuromorphic, optoelectronics
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:hh:diva-55381 (URN)10.1021/acsphotonics.4c01375 (DOI)001401440900001 ()2-s2.0-85215844034 (Scopus ID)
Funder
Novo Nordisk FoundationSwedish Research Council, N62909- 20-1-2038EU, Horizon Europe, 101046790
Available from: 2025-02-13 Created: 2025-02-13 Last updated: 2025-02-13Bibliographically approved
Flodgren, V., Das, A., Sestoft, J. E., Löfström, N., Alcer, D., Jeddi Abdarloo, H., . . . Mikkelsen, A. (2025). Flexible fabrication of aligned multi-nanowire circuits for on-chip prototyping. Microelectronic Engineering, 300, Article ID 112363.
Open this publication in new window or tab >>Flexible fabrication of aligned multi-nanowire circuits for on-chip prototyping
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2025 (English)In: Microelectronic Engineering, ISSN 0167-9317, E-ISSN 1873-5568, Vol. 300, article id 112363Article in journal (Refereed) Epub ahead of print
Abstract [en]

Circuits of multiple deterministically positioned semiconductor nanowires (NWs) is the basis of many devices for photonic, quantum, or conventional transistor applications. To explore and iterate on the design of larger circuits, the means to quickly place and electrically evaluate NWs at target locations must be developed. We propose and demonstrate a multi-NW circuit building concept on SiO2/Si substrates, which enables us to quickly position and orient NW components into pre-designed configurations. Micro-manipulator probes are used to guide the NWs into reactive ion etched trenches, with desired designs, before contact metallization. The positioning works over a wide combination of trench widths and depths. Positioning accuracies are contingent on EBL patterning, precise up to ±10 nm. To demonstrate the concept, we create circuits of InP and InAs NWs with a wide variety of specific orientations. The concept was used to iterate a procedure for creating optimal contacts for InP NW photodiodes. Subsequently, we could fabricate and electrically probe 54 fully operational nano-photodiodes placed on three different samples, from which considerable statistics of diode performance could be obtained. Fabrication steps are directly compatible with conventional Si CMOS architecture and should function for a wide range of NW types. The accuracy and rate of placement combined with high fabrication yields enables proof-of-concept prototyping of complex circuits. © 2025 The Authors

Place, publisher, year, edition, pages
Amsterdam: Elsevier, 2025
Keywords
III-V, Nanowires, Optoelectronics, Nanophotonics
National Category
Condensed Matter Physics Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:hh:diva-56426 (URN)10.1016/j.mee.2025.112363 (DOI)001505987300001 ()2-s2.0-105007058041 (Scopus ID)
Funder
Swedish Research CouncilNovo Nordisk FoundationKnut and Alice Wallenberg FoundationOlle Engkvists stiftelseEU, Horizon Europe, 101046790
Note

This work was supported by the Swedish Research Council, NanoLund, the Office of Naval Research (Grant No. N62909–20-1-2038), Novo Nordisk Foundation project SolidQ, the Wallenberg Initiative Materials Science for Sustainability (WISE) funded by the Knut and Alice Wallenberg Foundation, the Olle Engkvist Foundation, and the European Union Horizon Europe project InsectNeuroNano (Grant 101046790).

Available from: 2025-06-24 Created: 2025-06-24 Last updated: 2025-06-30Bibliographically approved
Bendrot, L., Delmas, M., Pettersson, H., Fu, Y., Ivanov, R., Visser, D., . . . Höglund, L. (2025). Modeling of Polarization-Selective Light-Coupling in Quantum Well Infrared Photodetectors with Small Pixel Sizes. Physica Status Solidi (a) applications and materials science
Open this publication in new window or tab >>Modeling of Polarization-Selective Light-Coupling in Quantum Well Infrared Photodetectors with Small Pixel Sizes
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2025 (English)In: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319Article in journal (Refereed) Epub ahead of print
Abstract [en]

Herein, a model is developed to study the polarization-selective light-coupling in quantum well infrared photodetector arrays with 15 and 30 μm pixel pitch. The polarization-selective light-coupling is achieved using 1D lamella gratings with varying grating orientation and studied through 2D and 3D finite-element method simulations. The extracted absorption quantum efficiency ηabs, derived from the field distribution, shows excellent agreement with experimental data in terms of absorption peak position for both pitch sizes. Several factors impacting the simulated absorptance level are discussed and a good agreement between the simulation and measured ηabs is achieved. Thanks to the developed 3D model, the polarization-selective light-coupling in pixels with 0° and 45° grating orientation is explored. The developed model paves the way for future studies on enhanced light-coupling in small pitch infrared detectors using resonance structures. © 2024 IRnova AB and The Author(s).

Place, publisher, year, edition, pages
Weinheim: Wiley-VCH Verlagsgesellschaft, 2025
Keywords
diffraction, finite-element method modeling, gratings, long-wave infrared, polarization-selectivity, quantum well infrared photodetectors
National Category
Physical Sciences
Identifiers
urn:nbn:se:hh:diva-55289 (URN)10.1002/pssa.202400691 (DOI)001388284100001 ()2-s2.0-85213549398 (Scopus ID)
Funder
Swedish Foundation for Strategic Research, ID21-0093
Available from: 2025-01-24 Created: 2025-01-24 Last updated: 2025-01-24Bibliographically approved
Jeddi Abdarloo, H., Adham, K., Zhao, Y., Witzigmann, B., Roemer, F., Bermeo, M., . . . Pettersson, H. (2024). Enhanced LWIR response of InP/InAsP quantum discs-in-nanowire array photodetectors by photogating and ultra-thin ITO contacts. Nanotechnology, 35(21), 1-7, Article ID 215206.
Open this publication in new window or tab >>Enhanced LWIR response of InP/InAsP quantum discs-in-nanowire array photodetectors by photogating and ultra-thin ITO contacts
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2024 (English)In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 35, no 21, p. 1-7, article id 215206Article in journal (Refereed) Published
Abstract [en]

Here we report on an experimental and theoretical investigation of the long-wavelength infrared (LWIR) photoresponse of photodetectors based on arrays of three million InP nanowires with axially embedded InAsP quantum discs. An ultra-thin top indium tin oxide contact combined with a novel photogating mechanism facilitates an improved LWIR normal incidence sensitivity in contrast to traditional planar quantum well photodetectors. The electronic structure of the quantum discs, including strain and defect-induced photogating effects, and optical transition matrix elements were calculated by an 8-band k center dot p simulation along with solving drift-diffusion equations to unravel the physics behind the generation of narrow linewidth intersubband signals observed from the quantum discs © 2024 The Author(s). Published by IOP Publishing Ltd.

Place, publisher, year, edition, pages
Bristol: Institute of Physics Publishing (IOPP), 2024
Keywords
infrared photodetectors, nanowires, quantum discs-in-nanowires, nanowire array photodetectors, long-wavelength infrared (LWIR), ultra-thin ITO contacts, photogating
National Category
Nano Technology Physical Sciences
Identifiers
urn:nbn:se:hh:diva-52939 (URN)10.1088/1361-6528/ad2bd0 (DOI)001181054200001 ()38382119 (PubMedID)2-s2.0-85187199398& (Scopus ID)
Funder
EU, Horizon 2020, 945378Swedish Research Council, 2018-04640Swedish Research Council, 2018-04722
Note

The authors would like to acknowledge financial support from the Swedish Research Council (project IDs: 2018-04722 and 2018-04640), the European Union’s Horizon 2020 Research and Innovation Programme under the Marie Skłodowska-Curie grant agreement no. 945378, NanoLund and Myfab. Further support from the federal state of Hesse, Germany, within the SMolBits project in the LOEWE program is also acknowledged.

Available from: 2024-06-12 Created: 2024-06-12 Last updated: 2024-06-12Bibliographically approved
Flodgren, V., Das, A., Sestoft, J. E., Alcer, D., Jensen, T. K., Jeddi, H., . . . Mikkelsen, A. (2024). On-Chip Light Transmission between Nanoscale Optoelectronic Devices. In: British and Irish Conference on Optics and Photonics, BICOP 2024: Proceedings. Paper presented at 2024 British and Irish Conference on Optics and Photonics, BICOP 2024, 18-20 December, 2024, London, United Kingdom. Optical Society of America
Open this publication in new window or tab >>On-Chip Light Transmission between Nanoscale Optoelectronic Devices
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2024 (English)In: British and Irish Conference on Optics and Photonics, BICOP 2024: Proceedings, Optical Society of America, 2024Conference paper, Published paper (Refereed)
Abstract [en]

On-chip light broadcasting can reduce spatial footprint and enhance energy efficiency in photonic neuromorphic systems. We demonstrate on-chip light transmission between InP nanowire photodiodes on silicon, addressing the gap towards complete nanoscale photonic integrated circuits. © 2025 The Author(s)

Place, publisher, year, edition, pages
Optical Society of America, 2024
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:hh:diva-55634 (URN)2-s2.0-85219168444 (Scopus ID)
Conference
2024 British and Irish Conference on Optics and Photonics, BICOP 2024, 18-20 December, 2024, London, United Kingdom
Available from: 2025-03-19 Created: 2025-03-19 Last updated: 2025-03-19Bibliographically approved
Kumari, R., Gellanki, J., Kundale, S. S., Ustad, R. E., Dongale, T. D., Fu, Y., . . . Kumar, S. (2023). Artificial synaptic characteristics of PVA:ZnO nanocomposite memristive devices. APL Materials, 11(10), Article ID 101124.
Open this publication in new window or tab >>Artificial synaptic characteristics of PVA:ZnO nanocomposite memristive devices
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2023 (English)In: APL Materials, E-ISSN 2166-532X, Vol. 11, no 10, article id 101124Article in journal (Refereed) Published
Abstract [en]

Computational efficiency is significantly enhanced using artificial neural network-based computing. A two-terminal memristive device is a powerful electronic device that can mimic the behavior of a biological synapse in addition to storing information and performing logic operations. This work focuses on the fabrication of a memristive device that utilizes a resistive switching layer composed of polyvinyl alcohol infused with ZnO nanoparticles. By incorporating ZnO nanoparticles into the polymer film, the fabricated memristive devices exhibit functionalities that closely resemble those of biological synapses, including short-term and long-term plasticity, paired-pulse facilitation, and spike time-dependent plasticity. These findings establish the ZnO nanoparticle-polymer nanocomposite as a highly promising material for future neuromorphic systems. © 2023 Author(s).

Place, publisher, year, edition, pages
Melville: American Institute of Physics (AIP), 2023
Keywords
Activation energy, Computation theory, Computational efficiency, II-VI semiconductors, Memristors, Metal nanoparticles, Neural networks, Polymer films, Semiconducting films
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:hh:diva-51997 (URN)10.1063/5.0165205 (DOI)2-s2.0-85175313733 (Scopus ID)
Available from: 2023-11-14 Created: 2023-11-14 Last updated: 2024-03-11Bibliographically approved
Menon, H., Jeddi, H., Morgan, N. P., Fontcuberta i Morral, A., Pettersson, H. & Borg, M. (2023). Monolithic InSb nanostructure photodetectors on Si using rapid melt growth. Nanoscale Advances, 5(4), 1152-1162
Open this publication in new window or tab >>Monolithic InSb nanostructure photodetectors on Si using rapid melt growth
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2023 (English)In: Nanoscale Advances, E-ISSN 2516-0230, Vol. 5, no 4, p. 1152-1162Article in journal (Refereed) Published
Abstract [en]

Monolithic integration of InSb on Si could be a key enabler for future electronic and optoelectronic applications. In this work, we report the fabrication of InSb metal-semiconductor-metal photodetectors directly on Si using a CMOS-compatible process known as rapid melt growth. Fourier transform spectroscopy demonstrates a spectrally resolved photocurrent peak from a single crystalline InSb nanostructure with dimensions of 500 nm × 1.1 μm × 120 nm. Time-dependent optical characterization of a device under 1550 nm illumination indicated a stable photoresponse with responsivity of 0.50 A W−1 at 16 nW illumination, with a time constant in the range of milliseconds. Electron backscatter diffraction spectroscopy revealed that the single crystalline InSb nanostructures contain occasional twin defects and crystal lattice twist around the growth axis, in addition to residual strain, possibly causing the observation of a low-energy tail in the detector response extending the photosensitivity out to 10 μm wavelengths (0.12 eV) at 77 K. © 2023 RSC.

Place, publisher, year, edition, pages
Cambridge: Royal Society of Chemistry, 2023
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:hh:diva-50155 (URN)10.1039/d2na00903j (DOI)000920713800001 ()2-s2.0-85147267048 (Scopus ID)
Funder
Swedish Foundation for Strategic Research, ICA16-0008The Crafoord Foundation, 20171001Royal Physiographic Society in Lund
Note

Funding: This work is supported by Swedish Foundation for Strategic Research (nr ICA16-0008), Crafoord Foundation (nr 20171001), Royal Physiographic Society of Lund, and NanoLund. AFM and NM would also like to thank funding from SNSF though the NCCR QSIT and project No. CRSK-2_190289.

Available from: 2023-03-22 Created: 2023-03-22 Last updated: 2023-05-10Bibliographically approved
Chalangar, E., Mustafa, E., Nur, O., Willander, M. & Pettersson, H. (2023). Nanopatterned rGO/ZnO: Al seed layer for vertical growth of single ZnO nanorods. Nanotechnology, 34(25), 1-7, Article ID 255301.
Open this publication in new window or tab >>Nanopatterned rGO/ZnO: Al seed layer for vertical growth of single ZnO nanorods
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2023 (English)In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 34, no 25, p. 1-7, article id 255301Article in journal (Refereed) Published
Abstract [en]

In this work, we demonstrate a novel low-cost template-assisted route to synthesize vertical ZnO nanorod arrays on Si (100). The nanorods were grown on a patterned double seed layer comprised of reduced graphene oxide (rGO) and Al-doped ZnO nanoparticles. The seed layer was fabricated by spray-coating the substrate with graphene and then dip-coating it into a Al-doped ZnO sol-gel solution. The growth template was fabricated from a double-layer resist, spin-coated on top of the rGO/ZnO:Al seed layer, and patterned by colloidal lithography. The results show a successful chemical bath deposition of vertically aligned ZnO nanorods with controllable diameter and density in the nanoholes in the patterned resist mask. Our novel method can presumably be used to fabricate electronic devices on virtually any smooth substrate with a thermal budget of 1 min at 300 °C with the seed layer acting as a conductive strain-relieving back contact. The top contact can simply be made by depositing a suitable transparent conductive oxide or metal, depending on the specific application. © 2023 The Author(s). Published by IOP Publishing Ltd.

Place, publisher, year, edition, pages
Bristol: Institute of Physics Publishing (IOPP), 2023
Keywords
colloidal lithography, nanofabrication, nanorod arrays, reduced graphene oxide, sol–gel, vertical growth, zinc oxide
National Category
Physical Sciences
Identifiers
urn:nbn:se:hh:diva-50413 (URN)10.1088/1361-6528/acc662 (DOI)000970495400001 ()36947870 (PubMedID)2-s2.0-85152244759 (Scopus ID)
Available from: 2023-05-05 Created: 2023-05-05 Last updated: 2024-01-15Bibliographically approved
Jeddi Abdarloo, H., Witzigmann, B., Adham, K., Hrachowina, L., Borgström, M. T. & Pettersson, H. (2023). Spectrally Tunable Broadband Gate-All-Around InAsP/InP Quantum Discs-in-Nanowire Array Phototransistors with a High Gain-Bandwidth Product. ACS Photonics, 10(6), 1748-1755
Open this publication in new window or tab >>Spectrally Tunable Broadband Gate-All-Around InAsP/InP Quantum Discs-in-Nanowire Array Phototransistors with a High Gain-Bandwidth Product
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2023 (English)In: ACS Photonics, E-ISSN 2330-4022, Vol. 10, no 6, p. 1748-1755Article in journal (Refereed) Published
Abstract [en]

High-performance broadband photodetectors offering spectral tunability and a high gain-bandwidth product are crucial in many applications. Here, we report on a detailed experimental and theoretical study of three-terminal phototransistors comprised of three million InP nanowires with 20 embedded InAsP quantum discs in each nanowire. A global, transparent ITO gate all around the nanowires facilitates a radial control of the carrier concentration by more than two orders of magnitude. The transfer characteristics reveal two different transport regimes. In the subthreshold region, the photodetector operates in a diffusion mode with a distinct onset at the bandgap of InP. At larger gate biases, the phototransistor switches to a drift mode with a strong contribution from the InAsP quantum discs. Besides an unexpected spectral tunability, the detector exhibits a state-of-the-art responsivity, reaching around 100 A/W (638 nm/20 μW) @ VGS = 1.0 V/VDS = 0.5 V with a gain-bandwidth product of around 1 MHz, in excellent agreement with a comprehensive real-device model. © 2023 The Authors. Published by American Chemical Society.

Place, publisher, year, edition, pages
Washington, DC: American Chemical Society (ACS), 2023
Keywords
gate-all-around contacts, infrared photodetectors, interface traps, nanowire array phototransistors, nanowires, photogating, quantum discs-in-nanowires
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:hh:diva-51396 (URN)10.1021/acsphotonics.2c02024 (DOI)001009704200001 ()2-s2.0-85162919445 (Scopus ID)
Funder
Swedish Research Council, 2018-04722
Note

Funding: The Swedish Research Council (project ID: 2018-04722), NanoLund and Myfab. Further support from the federal state of Hesse, Germany, within the SMolBits project in the LOEWE program is also acknowledged.

Available from: 2023-08-15 Created: 2023-08-15 Last updated: 2023-08-15Bibliographically approved
Chalangar, E., Björk, E. M. & Pettersson, H. (2022). Electrochemical investigation of carbon paper/ZnO nanocomposite electrodes for capacitive anion capturing. Scientific Reports, 12(1), Article ID 11843.
Open this publication in new window or tab >>Electrochemical investigation of carbon paper/ZnO nanocomposite electrodes for capacitive anion capturing
2022 (English)In: Scientific Reports, E-ISSN 2045-2322, Vol. 12, no 1, article id 11843Article in journal (Refereed) Published
Abstract [en]

In this work, we demonstrate an effective anion capturing in an aqueous medium using a highly porous carbon paper decorated with ZnO nanorods. A sol–gel technique was first employed to form a thin and compact seed layer of ZnO nanoparticles on the dense network of carbon fibers in the carbon paper. Subsequently, ZnO nanorods were successfully grown on the pre-seeded carbon papers using inexpensive chemical bath deposition. The prepared porous electrodes were electrochemically investigated for improved charge storage and stability under long-term operational conditions. The results show effective capacitive deionization with a maximum areal capacitance of 2 mF/cm2, an energy consumption of 50 kJ per mole of chlorine ions, and an excellent long-term stability of the fabricated C-ZnO electrodes. The experimental results are supported by COMSOL simulations. Besides the demonstrated capacitive desalination application, our results can directly be used to realize suitable electrodes for energy storage in supercapacitors. © 2022, The Author(s).

Place, publisher, year, edition, pages
London: Nature Publishing Group, 2022
National Category
Materials Chemistry
Identifiers
urn:nbn:se:hh:diva-48583 (URN)10.1038/s41598-022-15771-w (DOI)000824910400006 ()35821513 (PubMedID)2-s2.0-85133908753 (Scopus ID)
Available from: 2022-11-08 Created: 2022-11-08 Last updated: 2024-01-15Bibliographically approved
Projects
Nanowire-based focal plane arrays for IR imaging [2011-04639_VR]; Halmstad UniversityBias-tunable quantum disc-in-nanowire photonic crystal IR detectors [2018-04722_VR]; Halmstad UniversityMegapixel - superlattice detectors with optical metasurfaces [ID21-0093]
Organisations
Identifiers
ORCID iD: ORCID iD iconorcid.org/0000-0001-5027-1456

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