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Berg, A., Yazdi, S., Nowzari, A., Storm, K., Jain, V., Vainorius, N., . . . Borgström, M. T. (2016). Radial Nanowire Light-Emitting Diodes in the (AlxGa1-x)yIn1-yP Material System. Nano letters (Print), 16(1), 656-662
Open this publication in new window or tab >>Radial Nanowire Light-Emitting Diodes in the (AlxGa1-x)yIn1-yP Material System
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2016 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 16, no 1, p. 656-662Article in journal (Refereed) Published
Abstract [en]

Nanowires have the potential to play an important role for next-generation light-emitting diodes. In this work, we present a growth scheme for radial nanowire quantum-well structures in the AlGaInP material system using a GaInP nanowire core as a template for radial growth with GaInP as the active layer for emission and AlGaInP as charge carrier barriers. The different layers were analyzed by X-ray diffraction to ensure lattice-matched radial structures. Furthermore, we evaluated the material composition and heterojunction interface sharpness by scanning transmission electron microscopy energy dispersive X-ray spectroscopy. The electro-optical properties were investigated by injection luminescence measurements. The presented results can be a valuable track toward radial nanowire light-emitting diodes in the AlGaInP material system in the red/orange/yellow color spectrum. © 2015 American Chemical Society.

Place, publisher, year, edition, pages
Washington, DC: American Chemical Society (ACS), 2016
Keywords
Nanowire, radial, quantum well, STEM-EDX, light-emitting diodes, MOCVD
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:hh:diva-35700 (URN)10.1021/acs.nanolett.5b04401 (DOI)000368322700100 ()26708274 (PubMedID)2-s2.0-84957989531 (Scopus ID)
Projects
NWs4LIGHT
Funder
Swedish Research CouncilSwedish Foundation for Strategic Research Knut and Alice Wallenberg FoundationEU, FP7, Seventh Framework Programme, 280773
Available from: 2018-01-10 Created: 2018-01-10 Last updated: 2018-03-23Bibliographically approved
Paschoal Jr., W., Kumar, S., Jacobsson, D., Johannes, A., Jain, V., Canali, C. M., . . . Pettersson, H. (2014). Magnetoresistance in Mn ion-implanted GaAs:Zn nanowires. Applied Physics Letters, 104(15), Article ID 153112.
Open this publication in new window or tab >>Magnetoresistance in Mn ion-implanted GaAs:Zn nanowires
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2014 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 104, no 15, article id 153112Article in journal (Refereed) Published
Abstract [en]

We have investigated the magnetoresistance (MR) in a series of Zn doped (p-type) GaAs nanowires implanted with different Mn concentrations. The nanowires with the lowest Mn concentration (~0.0001%) exhibit a low resistance of a few kΩ at 300K and a 4% positive MR at 1.6K, which can be well described by invoking a spin-split subband model. In contrast, nanowires with the highest Mn concentration (4%) display a large resistance of several MΩ at 300K and a large negative MR of 85% at 1.6K. The large negative MR is interpreted in terms of spin-dependent hopping in a complex magnetic nanowire landscape of magnetic polarons, separated by intermediate regions of Mn impurity spins. Sweeping the magnetic field back and forth for the 4% sample reveals a hysteresis that indicates the presence of a weak ferromagnetic phase. We propose co-doping with Zn to be a promising way to reach the goal of realizing ferromagnetic Ga1-xMnxAs nanowires for future nanospintronics. © 2014 AIP Publishing LLC.

Place, publisher, year, edition, pages
New York: American Institute of Physics (AIP), 2014
Keywords
Nanospintronics, Ion-implantation, GaMnAs, Nanowires, hopping transport, Negative magnetoresistance
National Category
Natural Sciences
Identifiers
urn:nbn:se:hh:diva-25126 (URN)10.1063/1.4870423 (DOI)000335145200060 ()2-s2.0-84899622402 (Scopus ID)
Funder
Swedish Research CouncilKnut and Alice Wallenberg FoundationSwedish Foundation for Strategic Research
Note

W. Paschoal, Jr. and S. Kumar contributed equally to this work and are co-first authors. The authors acknowledge financial support from nmC@LU, the Swedish Research Council (VR), the Knut and Alice Wallenberg Foundation, the Swedish National Board for Industrial, Technological Development, the Swedish Foundation for Strategic Research, the Nordforsk research network “Nanospintronics; theory and simulations,” and the German Research Society (DFG) Project Ro1198/14. One of the authors, W.P., Jr., gratefully acknowledges financial support from the Pará Education Secretary (SEDUC) and the Pará Government School (EGPA).

Available from: 2014-04-22 Created: 2014-04-22 Last updated: 2018-04-03Bibliographically approved
Identifiers
ORCID iD: ORCID iD iconorcid.org/0000-0003-1971-9894

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